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An optically transparent and flexible memory with embedded gold nanoparticles in a polymethylsilsesquioxane dielectric

Identifieur interne : 001151 ( Main/Repository ); précédent : 001150; suivant : 001152

An optically transparent and flexible memory with embedded gold nanoparticles in a polymethylsilsesquioxane dielectric

Auteurs : RBID : Pascal:13-0332148

Descripteurs français

Pascal (Inist)
- Mémoire flash, Or, Nanoparticule, Nanomatériau, Dispositif à mémoire, Semiconducteur, Caractéristique capacité tension, Piégeage porteur charge, Dispositif MIS, Oxyde d'indium, Oxyde d'étain, Ethylène polymère, Téréphtalate, Couche active, Caractéristique courant tension, Hystérésis, Fiabilité, Contrainte mécanique, Substrat silicium, 8107, 7350G, 7361.
Wicri :
- concept : Or.

English descriptors

KwdEn :
- Active layer, CV characteristic, Charge carrier trapping, Flash memories, Gold, Hysteresis, IV characteristic, Indium oxide, MIS devices, Mechanical stress, Memory devices, Nanoparticles, Nanostructured materials, Polyethylenes, Reliability, Semiconductor materials, Terephthalates, Tin oxide.

Abstract

In this work, we demonstrated a simple fabrication route towards an optically transparent and flexible memory device. The device is simple and consists of a metal/insulator/semiconductor structure; namely MIS. The preliminary MIS study with gold nanoparticles embedded between the polymethylsilsesquioxane layers was fabricated on p-Si substrate and the capacitance versus voltage measurements confirmed the charge trapped capability of the fabricated MIS memory device. Subsequently, an optically transparent and flexible MIS memory device made from indium-tin-oxide coated polyethylene terephthalate substrate and pentacene was used to replace the opaque p-Si substrate as the active layer. Current versus voltage (I-V) plot of the transparent and flexible device shows the presence of hysteresis. In an I-V plot, three distinct regions have been identified and the transport mechanisms are explained. The fabricated optically transparent and mechanically flexible MIS memory device can be programmed and erased multiple times, similar to a flash memory. Mechanical characterization to determine the robustness of the flexible memory device was also conducted but failed to establish any relationship in this preliminary work as the effect was random. Hence, more work is needed to understand the reliability of this device, especially when they are subjected to mechanical stress.

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Pascal:13-0332148

Le document en format XML

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<author><name sortKey="Ooi, P C" uniqKey="Ooi P">P. C. Ooi</name>
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<author><name sortKey="Aw, K C" uniqKey="Aw K">K. C. Aw</name>
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<author><name sortKey="Gao, W" uniqKey="Gao W">W. Gao</name>
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<wicri:noRegion>Chemical and Materials Engineering, The University of Auckland</wicri:noRegion>
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<author><name sortKey="Razak, K A" uniqKey="Razak K">K. A. Razak</name>
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<term>Hysteresis</term>
<term>IV characteristic</term>
<term>Indium oxide</term>
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<term>Memory devices</term>
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<term>Semiconducteur</term>
<term>Caractéristique capacité tension</term>
<term>Piégeage porteur charge</term>
<term>Dispositif MIS</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Ethylène polymère</term>
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<term>Couche active</term>
<term>Caractéristique courant tension</term>
<term>Hystérésis</term>
<term>Fiabilité</term>
<term>Contrainte mécanique</term>
<term>Substrat silicium</term>
<term>8107</term>
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<front><div type="abstract" xml:lang="en">In this work, we demonstrated a simple fabrication route towards an optically transparent and flexible memory device. The device is simple and consists of a metal/insulator/semiconductor structure; namely MIS. The preliminary MIS study with gold nanoparticles embedded between the polymethylsilsesquioxane layers was fabricated on p-Si substrate and the capacitance versus voltage measurements confirmed the charge trapped capability of the fabricated MIS memory device. Subsequently, an optically transparent and flexible MIS memory device made from indium-tin-oxide coated polyethylene terephthalate substrate and pentacene was used to replace the opaque p-Si substrate as the active layer. Current versus voltage (I-V) plot of the transparent and flexible device shows the presence of hysteresis. In an I-V plot, three distinct regions have been identified and the transport mechanisms are explained. The fabricated optically transparent and mechanically flexible MIS memory device can be programmed and erased multiple times, similar to a flash memory. Mechanical characterization to determine the robustness of the flexible memory device was also conducted but failed to establish any relationship in this preliminary work as the effect was random. Hence, more work is needed to understand the reliability of this device, especially when they are subjected to mechanical stress.</div>
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An optically transparent and flexible memory with embedded gold nanoparticles in a polymethylsilsesquioxane dielectric

An optically transparent and flexible memory with embedded gold nanoparticles in a polymethylsilsesquioxane dielectric

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri